Dr. Thierry Ferrus

Dr Thierry Ferrus has been working in the field of semiconductors and nanostructures for the past 20 years, specialising himself in transport measurements at low temperatures. He initially studied the electronics properties of 2D and 1D GaAs-based superlattices under high magnetic fields and electric fields at the Institut National des Sciences Appliquées and the Laboratoire National des Champs Magnétiques Intenses in Toulouse, France during his PhD. He then joined the Semiconductor Physics Group at the Cavendish Laboratory, University of Cambridge, United Kingdom in 2001 to work with Prof. Sir Michael Pepper on disorder and electron interaction in doped MOSFETs with applications in quantum computation. In 2006, he joined the Microelectronics Group, still in Cambridge, to work on microwave effects in silicon single electron transistors. Since 2007, he holds a permanent position at the Hitachi Cambridge Laboratory where he is leading the research on Quantum Information on doped and isolated silicon qubit devices. Aside research, he also had many teaching activities in high schools, schools of engineering and Universities both in France and UK, including some of Cambridge’s colleges.